The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1999

Filed:

Sep. 16, 1997
Applicant:
Inventors:

Shigeo Fujii, Kumagaya, JP;

Shin Noguchi, Kumagaya, JP;

Noriaki Nakayama, Ube, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ; H01L / ; G11C / ; G11B / ;
U.S. Cl.
CPC ...
324252 ; 360113 ;
Abstract

The change rate of resistance in a multi-layered spin-valve magneto-resistive thin film using a FeMn anti-ferromagnetic layer has been improved. In multi-layered magento-resistive thin film having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer with an adjoining anti-ferromagnetic layer are laminated on a substrate; the magnetizing direction of each ferromagnetic layer lying in the film surface; the magnetizing direction of the second ferromagnetic layer being pinned by the magnetic exchange coupling field generated by the anti-ferromagnetic layer; and the magnetizing direction of the first ferromagnetic layer not being pinned, the degree of dispersion of lattice spacing, or lattice relaxations at the interface of the second ferromagnetic layer and the anti-ferromagnetic layer is set to equal to or less than 0.5 A.


Find Patent Forward Citations

Loading…