The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 1999

Filed:

May. 18, 1998
Applicant:
Inventors:

Krishna Shenai, Naperville, IL (US);

Malay Trivedi, Chicago, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L / ;
U.S. Cl.
CPC ...
257312 ; 257595 ; 257532 ; 438393 ; 361277 ;
Abstract

A tunable capacitor includes a first capacitor formed from semiconductor material and having a first terminal defining an anode, and a second capacitor integrally formed with the first capacitor from semiconductor material, the second capacitor being operatively coupled in series with the first capacitor, and having a second terminal defining a cathode. The second capacitor is formed as a field effect device or MOSFET configured to provide a depletion region controlled by applying a control voltage to a control terminal of the field effect device. The first capacitor is reverse biased by application of a reverse bias voltage between the anode and the cathode to provide a predetermined capacitance while the control voltage applied to the control terminal of the second capacitor varies the depletion region such that the capacitance of second capacitor is varied independently of the reverse bias voltage.


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