The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Mar. 24, 1997
Petrus JA. Thijs, Eindhoven, NL;
Teunis Van Dongen, Eindhoven, NL;
Uniphase OPto Holdings, Incorporated, San Jose, CA (US);
Abstract
A radiation-emitting semiconductor diode of a buried hetero type having an active layer situated between two InP cladding layers with a confinement layer of limited Al content disposed between the active layer and one or both of the InP cladding layers. The active region has an emission wavelength above 1 .mu.m and forms part, together with the separate confinement layer and the InP cladding layers, of a strip-shaped region which is surrounded by a current-blocking third cladding layer of InP. The separate confinement layer(s) of the inventive diode includes a semiconductor material with a most 30% aluminum, and preferably at most 20% aluminum, or an aluminum-free semiconductor material. The diode has reduced starting current increases over time so as to increase the life of the diode. A method of manufacturing such a diode is also provided.