The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
May. 22, 1996
Hironari Takahashi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A polysilicon film which realizes an excellent ohmic contact is obtained. A board 4 to which a silicon substrate 3 is fixed is disposed within a chamber 1. An SiH.sub.4 gas, an N.sub.2 gas, a TEOS gas and an anhydrous HF gas are introduced into the chamber 1, through valves 8a, 8b, 8c and 8d, respectively. By means of a pump 7 through a valve 6, the air inside the chamber 1 is exhausted. The chamber 1 is heated up by a heater 2. First, the N.sub.2 gas, the TEOS gas and the anhydrous HF gas are introduced into the chamber 1, to remove a silicon natural oxidation film 34 which is formed on the silicon substrate 3. Next, after exhausting the air inside the chamber 1, the SiH.sub.4 and the N.sub.2 gas are introduced into the chamber 1, to form a polysilicon film 35 on the silicon substrate 3. Since the silicon natural oxidation film 34 and particles do not exist between the silicon substrate 3 and the polysilicon film 35 by employing this process, the polysilicon film 35 having an excellent ohmic contact is obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile