The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Apr. 01, 1997
Hideaki Harakawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An inter-level insulating film is formed on a first Al film and a contact hole is formed to partly expose the first Al film. A TiW film is formed on the internal side surface of the contact hole and a W film is formed to form a conductive plug. After a TiN film and a second Al film are formed on the plug and inter-level insulating film, a resist mask used for etching the above films is formed in position corresponding to the plug. By use of this plug, the second Al film and TiN film are removed by RIE using Cl-series gas. Since the selective etching ratio of TiW film/Ti film is approx. 0.2, etching of the TiW film in the plug can be suppressed even if the mask is formed in position deviated from the upper portion of the plug. Therefore, after formation of the insulating film, occurrence of void can be prevented, thereby enhancing the reliability and service life of the interconnection structure.