The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Mar. 19, 1996
Wan-in Lee, Kwacheon-city, KR;
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Abstract
This invention is related to the manufacturing method of ferroelectric capacitor, which can be applied to the memory cell of FRAM (Ferroelectric Random Access Memory). Fabrication of ferroelectric capacitor comprising the steps of: coating a first PZT sol-gel solution on a RuO.sub.X electrode to form a first PZT layer; baking the first PZT layer; annealing the first PZT layer to produce a seed layer with a perovskite structure; coating a second PZT sol-gel solution on the seed layer to form a second PZT layer; baking the second PZT layer; and annealing the second PZT layer to form a PZT film with a perovskite structure. The ferroelectric capacitor not only has a lower leakage current level and a higher degree of remanent polarization than the conventional capacitor, but also has almost the same leakage current level as an existing Pt/PZT/Pt capacitor.