The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Apr. 28, 1997
Applicant:
Inventor:
Minoru Hamada, Ogaki, JP;
Assignee:
Sanyo Electric Company, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257239 ; 257316 ; 257291 ; 257402 ; 257403 ;
Abstract
A depletion type transistor formed on a semiconductor substrate includes a drain region and a source region formed in distinct areas on the substrate. An inversion layer is formed in the surface area between the drain and the source regions. The transistor further includes two insulated gates: a floating gate located above the substrate and insulated from the inversion layer by an insulating layer in such a way as to cover the inversion layer, and a control gate provided above the floating gate and insulated from the floating gate by the insulating layer.