The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Nov. 21, 1996
Applicant:
Inventors:
Akira Yoshino, Osaka, JP;
Takashi Yokoyama, Osaka, JP;
Yoshinori Ohmori, Osaka, JP;
Kazuma Yamamoto, Osaka, JP;
Assignee:
Daido Hoxan, Inc., Hokkaido, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438708 ; 438714 ; 438719 ; 216 65 ;
Abstract
A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.