The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 1999

Filed:

Nov. 08, 1996
Applicant:
Inventor:

Graeme W Eldridge, Murrysville, PA (US);

Assignee:

Northrop Grumman Corporation, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25F / ;
U.S. Cl.
CPC ...
205124 ; 205210 ; 205219 ; 205674 ; 205684 ; 205686 ;
Abstract

The present invention provides for a wet etch and method for preparing a semiconductor device structure from a silicon carbide wafer. A first embodiment of the wet etch comprises a vessel, a tetrahydrofurfuryl alcohol and potassium nitrite etching solution within the vessel, an electrode, a wafer support for positioning at least a portion of the silicon carbide wafer within the etching solution, and a voltage source coupled with the electrode and the wafer support. A second embodiment of the wet etch comprises a wafer carrier for holding at least one wafer, a polishing plate adjacent the wafer carrier, a voltage source having a first terminal electrically coupled with the wafer and a second terminal electrically coupled with the polishing plate, and an applicator adjacent the polishing plate for depositing an etching solution on a surface of the polishing plate.


Find Patent Forward Citations

Loading…