The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1999
Filed:
Feb. 05, 1998
Hisashi Takemura, Tokyo, JP;
NEC Corporation, , JP;
Abstract
A field-emission cold cathode having emitters 9 formed on silicon substrate 1, and a gate electrode film 7 formed on insulation film 6 and having openings over the emitters, further includes trenches 3 formed in silicon substrate 1, a plurality of emitters formed on regions surrounded by trenches 3, and n-type regions 5 formed on the silicon substrate directly below the emitters. Breakdowns caused by field concentrations brought about by the spread of current directly below the emitters can thus be prevented, and thus the emitter pitch within regions surrounded by trenches can be determined at will. When high voltage is impressed due to a discharge, the resistance connected to the emitters prevents the flow of large currents to the emitters and the occurrence of short-circuit damage.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile