The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1999
Filed:
Dec. 11, 1996
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a metal terminal provided on a semiconductor substrate and a protection element. The protection element includes an insulated gate field-effect transistor. The transistor has a first diffusion layer of a reverse conductive-type formed on one conductive type region of the semiconductor substrate and connected to the metal terminal, as its source. The transistor also includes a second diffusion layer of a reverse conductive-type connected to an electrode wire having a constant electric potential, as its source, and has a gate electrode connected to the electrode wire. A lateral bipolar transistor includes a third diffusion layer of a reverse conductive-type formed with a constant spaced distance with respect to the second diffusion layer and connected to the metal terminal, as its collector, and also has the second diffusion layer as its emitter, and furthermore has the one conductive-type region as its base. Thus, a semiconductor device is protected from an electrostatic discharge (ESD) breakdown device even though having high density and a high operating speed.