The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 08, 1999
Filed:
Jun. 09, 1997
Applicant:
Inventor:
Donald Ray Disney, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257329 ; 257139 ; 257330 ;
Abstract
An improved insulated gate bipolar transistor (IGBT) device structure and a method for fabricating such a device. This structure uses self-aligned and substantially undiffused successive N+ and P+ implants. The P+ implant is at high energy, which forms a subsurface P+ region below the entire bottom of an N+ 'source' region of the IGBT. This low resistivity region suppresses thyristor latch-up when contacted via a surface trench. Self-aligned techniques provide method and product improvements.