The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Mar. 17, 1998
Shigeyuki Kiyota, Yokohama, JP;
Hironori Saito, Kanagawa, JP;
Nissan Motor Co., Ltd., Kanagawa, JP;
Abstract
A MOSFET integrated circuit device has a main MOSFET, a mirror MOSFET, a current sensing resistor, a reference voltage source, a comparator for detecting an overcurrent condition by comparing a potential at the source of the mirror MOSFET with a reference potential of the reference voltage source, and a control circuit section for turning off the main MOSFET in case of the overcurrent condition. The device further comprises a group of pads allowing a test of the overcurrent detecting function by application of a test current much lower than an overcurrent. The pad group comprises a first pad for measuring the potential at the source of the mirror MOSFET, a second pad for measuring the reference potential and a third pad for detecting a change in the output of the comparator.