The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
May. 27, 1997
Israel A Lesk, Phoenix, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method for making a semiconductor structure which may be subject to small particle contaminants (12) includes pre-reacting the small particle (12) with a substrate (10) at a reaction temperature (27, 28). Pre-reacting the particle's (12) greatly reduces the particles' susceptibility to further reaction during subsequent processing, particularly gate dielectric formation. Consequently, the pre-reacted particle (13) as well as the remainder of the structure surface (11) can be covered with a high quality conformal deposited dielectric (14) which maintains a uniform thickness. Potential localized high leakage current density regions are thereby reduced. Additionally, an undesirably thin gate oxide region (70) adjacent a thick field oxide region (66) of a typical MOS structure is eliminated. Yield and reliability are thereby enhanced.