The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 1999
Filed:
Jul. 25, 1996
Applicant:
Inventors:
Min-hwa Chi, Palo Alto, CA (US);
Chih-sieh Teng, San Jose, CA (US);
Albert Bergemont, Palo Alto, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438258 ; 438585 ;
Abstract
A CMOS device that includes three-volt MOS transistor, five-volt MOS transistors, FLASH EPROM cells, poly resistors, and double-poly capacitors is formed in a single integrated CMOS process flow. The FLASH EPROM cells are formed as single-transistor memory cells that operate on low to very-low voltages.