The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1999
Filed:
May. 01, 1998
Applicant:
Inventors:
Robert Alan Hamm, Staten Island, NY (US);
Rose Fasano Kopf, Green Brook, NJ (US);
Robert William Ryan, Piscataway, NJ (US);
Alaric Tate, Chatham, NJ (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257197 ; 257198 ; 257623 ; 257751 ;
Abstract
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
Hamm, Robert. (1999). Inp heterostructure devices (U.S. Patent No. 5907165). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5907165
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile