The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1999
Filed:
Jul. 10, 1998
Applicant:
Inventors:
Jeffrey Nicholas Bremmer, Midland, MI (US);
Youfan Liu, Midland, MI (US);
Assignee:
Dow Corning Corporation, Midland, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427226 ; 427 58 ; 427240 ; 427379 ; 427387 ;
Abstract
This invention pertains to a method of producing low dielectric coatings from hydrogen silsesquioxane resin. The method for producing the coatings comprises applying a film of hydrogen silsesquioxane resin onto a substrate and thereafter curing the film by first heating at a temperature of about 325.degree. C. to 350.degree. C. thereafter heating at a temperature of about 400.degree. C. to 450.degree. C. until the normalized SiH bond density is 50 to 80%. This two step curing process produces films having lower dielectric constant and improved mechanical properties.