The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 1999
Filed:
Dec. 06, 1995
Applicant:
Inventors:
McDonald Robinson, Goleta, CA (US);
Richard C Westhoff, Chandler, AZ (US);
Charles E Hunt, Davis, CA (US);
Li Ling, Hillsboro, OR (US);
Assignee:
Lawrence Semiconductor Research Laboratory, Inc., Tempe, AZ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; C23F / ;
U.S. Cl.
CPC ...
1566571 ; 148D / ; 148D / ; 438 77 ; 438 82 ; 1566301 ; 1566531 ; 1566621 ;
Abstract
Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.