The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Feb. 26, 1998
Jong-Hoon Park, Choongcheongbuk-Do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A power down circuit for a memory device is provided that includes a burn-in voltage detector to generate a burn-in voltage detecting signal to control a power down signal when a burn-in voltage reaches a predetermined level. The power down circuit enhances a burn-in function by operating the memory cells and peripheral circuits for a relatively long time at a high level voltage when a burn-in is performed on the memory device with an auto power down function. Thus, the memory device reliability is also enhanced. The memory device includes a power down timer for generating a power down signal to control an input/output operation of a memory cell in response to a plurality of address transition detecting signals, a plurality of data input detecting signals, a chip select detecting signal, a write mode detecting signal and the burn-in voltage detecting signal.