The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
May. 19, 1998
Yorito Ota, Hyogo, JP;
Hiroyuki Masato, Osaka, JP;
Shigeru Morimoto, Osaka, JP;
Junko Iwanaga, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A channel layer made of n-type GaAs doped with Si, a hole absorption layer made of InGaAs having a valance band higher in energy level than that of GaAs, and an undoped layer made of GaAs are formed sequentially on a semi-insulating substrate made of GaAs. A gate recess region having a pair of sidewall portions each consisting of an upper sidewall composed of the undoped layer and a lower sidewall composed of the hole absorption layer is formed on the channel region. The channel region is exposed in the gate recess region. An indent having an undercut configuration is formed in the lower sidewall of the gate recess region. A gate electrode is formed to extend over a stepped portion composed of the sidewall portion of the gate recess region closer to a drain electrode.