The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Jun. 12, 1997
Applicant:
Inventor:
Hyung Soon Shin, Seoul, KR;
Assignee:
Goldstar Electron Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438291 ; 438305 ;
Abstract
A MOSFET and method of manufacture thereof is disclosed in which an ion implantation layer formed in the channel region is isolated from the source and drain regions. The source and drain regions are of a lightly doped drain or 'LDD' structure. According to this MOSFET and method, short channel effects are decreased by the channel implant, yet hot carrier and doping compensation effects are decreased, junction capacitance is decreased, and mobility of the carriers also may be improved.