The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Jan. 05, 1998
Applicant:
Inventors:
Shiou-Han Liaw, Hsinchu, TW;
Feng-Ling Hsiao, Hsinchu, TW;
Assignee:
Utek Semiconductor Corp., , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H04L / ;
U.S. Cl.
CPC ...
438227 ; 438230 ; 438231 ; 438305 ; 438306 ; 438307 ; 438232 ;
Abstract
A gate oxide and a first conducting layer are formed on a substrate, and then the first conducting layer is patterned and a gate in a NMOS region is formed. A LDD, a sidewall spacer, and a drain/source in the NMOS region are then formed in series. A layer of hard mask is formed. The layer of hard mask and the first conducting layer are patterned and a gate in a PMOS region is formed. A LDD, a sidewall spacer, and a drain/source in the NMOS region are then formed in series.