The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Apr. 09, 1997
Yasuaki Hokari, Tokyo, JP;
Chihiro Ogawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
At first, first transfer electrodes are formed selectively on a semiconductor substrate. Then, the surface of the first transfer electrodes are thermally oxidized at a temperature of 850.degree. to 950.degree. C. to form thermal oxide layers. After depositing a polycrystalline silicon layer over the substrate, rapid annealing is performed the first transfer electrodes, the thermal oxide layers and the polycrystalline silicon layer by a halogen lamp. Thus, after forming the polycrystalline silicon layer to be second transfer electrodes, annealing is performed by heating by lamp. Therefore, the thermal oxide layers can be efficiently heated by the irradiation heat from the polycrystalline silicon layer located upper side thereof and also from the first electrodes located at backside. Accordingly, the tolerance voltage of the thermal oxide layer can be improved and the thickness of the thermal oxide layer can be made thinner.