The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1999
Filed:
Oct. 29, 1997
Suk-Ki Min, Seoul, KR;
Eun Kyu Kim, Seoul, KR;
Abstract
A quantum wire laser diode fabrication method includes the steps of forming a buffer layer and an epitaxial layer sequentially on a substrate, forming a V-grooved pattern into the epitaxial layer to form a current blocking layer, and forming another buffer layer thereon, forming a quantum wire laser structure on the V-grooved pattern, forming a contact layer, and forming an electrode. The fabrication method employs a current blocking layer formed outside the V-grooved pattern to interrupt the current from flowing thereinto, for thereby enabling the current to only flow into the active layer, without requiring any subsequent processes which allow the current to efficiently flow into the active layer, and further obtaining the low threshold current.