The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 1999

Filed:

Nov. 17, 1997
Applicant:
Inventors:

Lydia J Young, Palo Alto, CA (US);

Vojtech Pacak, Scotts Valley, CA (US);

Assignee:

WJ Semiconductor Equipment Group, Inc., Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
31511141 ; 31511151 ; 118623 ; 20429811 ;
Abstract

A plasma generating source for processing semiconductor integrated circuits is provided. The plasma generating source is configured to control the amount of electromagnetic energy and the distribution of the electric and magnet energies coupled to the plasma. The plasma generating source comprises a plasma containing region and a source of electromagnetic energy for generating a plasma. An electrostatic shield is disposed between the source of electromagnetic energy and the plasma containing region. The electrostatic shield has a plurality of openings therethrough configured to control the amount and distribution of electromagnetic energy coupled from the source into the plasma containing region. The openings may be configured in a variety of ways to control the magnitude and distribution of electromagnetic energy coupled to the plasma.


Find Patent Forward Citations

Loading…