The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Feb. 19, 1997
Applicant:
Inventors:
Wen-Shiang Liao, Miao-Li Hsien, TW;
Si-Chen Lee, Taipei, TW;
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257632 ; 257646 ; 257 57 ; 438763 ; 438786 ;
Abstract
The present invention provides a composite passivation film deposited at low temperatures (<150.degree. C.). A hydrogenated amorphous silicon nitride (a-SiN.sub.x :H) film is formed over a semiconductor device. Then a very thin layer (>6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.