The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Jun. 16, 1997
Applicant:
Inventor:
Makoto Suwa, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257358 ; 257359 ; 257379 ; 257380 ; 257381 ;
Abstract
A well region is provided on a doped semiconductor layer. A resistor element is formed on the well region and a fixed voltage level is applied. A parasitic capacitance is formed between the well region and the resistor and a noise generated at one end of the resistor is compensated for or filtered by the parasitic capacitance.