The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Aug. 22, 1997
Hoon Huh, Choongcheongbuk-Do, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A mask for a semiconductor device includes a frame having an opening therein, a membrane film formed on the frame, and a patterned light shield formed on the membrane via an interlayer. To form the mask, an interlayer is formed on a first silicon layer, and a second silicon layer is formed on the interlayer. The second silicon layer is selectively etched to thereby form a plurality of openings therethrough, and a light shield is formed in a corresponding one of the openings. The remaining second silicon layer is removed, and a predetermined region of the first silicon layer is etched to expose the interlayer therethrough. A membrane film is formed on an entire lower surface of the resultant structure, and a predetermined region of the interlayer is etched to expose a predetermined region of the membrane film.