The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 11, 1999

Filed:

Dec. 13, 1996
Applicant:
Inventors:

Kiyoshi Hirao, Aichi, JP;

Koji Watari, Aichi, JP;

Motohiro Toriyama, Aichi, JP;

Syuzo Kanzaki, Aichi, JP;

Masaaki Obata, Aichi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ;
U.S. Cl.
CPC ...
264639 ; 264650 ; 264656 ; 264665 ; 264683 ;
Abstract

The present invention provides silicon nitride ceramics having high thermal conductivity and a method for production thereof. This invention relates to a method for producing a silicon nitride sintered body having a microstructure with silicon nitride crystals oriented uniaxially and exhibiting high thermal conductivity of 100 to 150 W/mK in the direction parallel to the orientation direction of the crystals, which comprises of preparing a slurry by mixing a mixed powder of a sintering auxiliary, beta-silicon nitride single crystals as seed crystals and a silicon nitride raw powder with a dispersing medium, forming the slurry by tape casting or extrusion forming, calcining the formed silicon nitride body with beta-silicon nitride single crystals oriented parallel to the casting plane to remove the organic components, densifying it by hot pressing and the like if required, and further annealing it at 1700 to 2000.degree. C. under the nitrogen pressure of 1 to 100 atmospheres.


Find Patent Forward Citations

Loading…