The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Aug. 20, 1997
Chul-woo Yi, Seoul, KR;
Hoon Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An internal boosted voltage generator for a semiconductor memory device eliminates excessive increases in boosted voltage and reduces current consumption even though the power supply voltage increases. The internal boosted voltage generator includes a pumping portion for pumping a signal from an output node in response to a control signal, a precharging portion for precharging the output node of the pumping portion, and a controlling portion interposed between the pumping portion and the precharge portion. The controlling portion is a pulse generator that varies the precharge time of the precharging portion by varying the pulse with of an output signal according to the power supply voltage. The output signal of the controlling portion has a relatively narrow pulse width at high power supply voltages and a wider pulse width at low power supply voltages. Therefore, the device is not exposed to excessive stress even though the power supply voltage increases greatly.