The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Jul. 11, 1997
Samuel D Naffziger, Ft Collins, CO (US);
Jeffry D Yetter, Loveland, CO (US);
Hewlett-Packard Company, Palo Alto, CA (US);
Abstract
A circuit for reducing capacitive coupling between a culprit and a victim signal line is provided which comprises two inverters, a n-channel FET connected as a capacitor, and a p-channel FET connected as a capacitor. The input of both inverters are connected to the culprit line. The first inverter is designed to respond to high-to-low transition on the culprit line more rapidly than a low-to-high transition. The output of the first inverter is connected to the drain and source of the n-channel FET. The gate of the n-channel FET is connected to the victim line. The second inverter is designed to respond to low-to-high transition on the culprit line more rapidly than a high-to-low transition. The output of the second inverter is connected to the drain and source of the p-channel FET. The gate of the p-channel FET is connected to the victim line.