The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Feb. 07, 1998
Applicant:
Inventors:
Joseph Herbert Johnson, Sunnyvale, CA (US);
Pablo Eugenio D'Anna, Los Altos, CA (US);
Assignee:
XEMOD, Inc., Sunnvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257343 ; 257341 ; 257401 ;
Abstract
A quasi-mesh gate structure for the RF MOS transistor having a conductive plug source-body-backside connection is disclosed. The RF MOS transistor having the quasi-mesh gate structure utilizes significantly shorter feeding gate paths as compared to the long feeding gate paths used in the prior art RF MOS devices. The RF MOS transistor having the quasi-mesh gate structure can utilize the polysilicon gates or silicided gates. This results in simplification of the fabrication process and/or improved performance at high frequencies.