The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Mar. 07, 1997
Masahiko Sano, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A semiconductor crystal infrared detecting portion structure is provided in a photoconductive infrared detector and is provided at opposite ends with first and second electrodes so biased that the first and second electrodes have a positive potential and a ground potential respectively. The semiconductor crystal infrared detecting portion structure has an infrared receiving part so that the semiconductor crystal infrared detecting portion structure comprises a first half region defined between the infrared receiving part and the first electrode and a second half region defined between the infrared receiving part and the second electrode. At least the second half region reduces in section area toward the second electrode to increase a resistance of at least the second half region.