The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Nov. 25, 1997
Young Kwon Jun, Seoul, KR;
LG Semicon Co., Ltd., Cheongju, KR;
Abstract
A structure of an insulating layer in a semiconductor device includes a substrate, at least one inorganic insulating layer pattern formed on the substrate, and an organic insulating layer formed on an upper part of the substrate and the inorganic insulating layer pattern. Also, a method for planarizing the insulating layer includes the steps of forming a substrate, forming a base insulating layer having a step coverage to form an upper region and a lower region on the substrate, forming a first insulating layer on the base insulating layer, selectively etching the first insulating layer to form at least one first insulating layer at a lower region of the base insulating layer, and forming a second insulating layer at the upper part of the first insulating layer including a first insulating layer pattern.