The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 04, 1999

Filed:

Sep. 26, 1997
Applicant:
Inventors:

Hiroshi Takagi, Ohtsu, JP;

Makoto Kumatoriya, Omihachima, JP;

Tsuguo Fukuda, Sendai, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 15 ; 117 13 ; 117936 ;
Abstract

Provided is an oxide single crystal of large size having the crystal structure of Ca.sub.3 Ga.sub.2 Ge.sub.4 O.sub.14 and containing Ge as a constituent element and a method of manufacturing thereof. The oxide single crystal is obtained by a manufacturing method comprising the steps of preparing a melt of starting materials containing GeO.sub.2 and growing said oxide crystal from said melt of starting materials in single-crystal growing atmosphere, which is characterized in that said starting materials contain GeO.sub.2 in a stoichiometrically excess amount, and/or said single-crystal growing atmosphere is a gas having an oxygen partial pressure greater than about 2.times.10.sup.-1 atm.


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