The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Jan. 27, 1997
Kuo-Chang Wu, Taichung, TW;
Tzu-Shih Yen, Taipei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A method for forming a gate with a tapered spacer is disclosed. The method includes forming a polysilicon layer on a substrate, and then forming a first oxide layer on the polysilicon layer. A photoresist layer is formed on the first oxide layer, where the photoresist layer defines a gate region, and then portions of the oxide layer and the polysilicon layer are removed using the photoresist layer as a mask, thereby forming a gate. A second oxide layer is formed on the substrate and the first oxide layer. Afterwards, the second oxide layer is isotropically etched so that the slope of the second oxide layer near the upper corners of the gate is reduced. Finally, the second oxide layer is anisotropically etched back to form spacers on the sidewalls of the gate.