The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 1999
Filed:
Aug. 13, 1996
Ki Sik Choi, Ichon, KR;
Yo Hwan Koh, Ichon, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for fabricating an SOI wafer, which involves bonding a plurality of wafers each provided at its upper surface with an oxide film in such a manner that the oxide film of each wafer is upwardly disposed, heating the resulting wafer structure to form an ingot, and cutting the ingot into pieces which will be used as SOI wafers. Accordingly, it is possible to achieve an improvement in productivity in the fabrication of SOI wafers. As a result, mass production can be achieved. The invention also provides a method for fabricating an SOI device, which involves forming a silicon film having a desired thickness beneath a field oxide film and implanting impurity ions in the silicon film, thereby forming doped regions. Accordingly, it is possible to solve the problem caused by floating of the semiconductor substrate.