The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Dec. 20, 1996
Kil Ho Lee, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for forming wells of a semiconductor device which involves the formation of an additional ion implanted layer and a double rapid thermal annealing for a short period of time, thereby completely removing defects while maintaining a constant resistance in the silicon layer of the semiconductor device. The method includes the steps of providing a semiconductor substrate, sequentially implanting impurity ions in the semiconductor substrate four times, thereby sequentially forming an ion implanted layer adapted to form a well, an additional ion implanted layer, a channel stop ion implanted layer and an ion implanted layer adapted to control a threshold voltage in the semiconductor substrate, and conducting a rapid thermal annealing for the resulting structure for a short period of time in two steps.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile