The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Sep. 16, 1996
Young Kwon Jun, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A method for forming an interconnection of a semiconductor device, includes the steps of forming an insulating layer on a substrate on which a lower conductive layer is formed, selectively removing the insulating layer to form a first connecting hole and a second connecting hole for the pattern of an upper conductive layer, growing a first conductive material in the first connecting hole to form a buried plug and then depositing a second conductive material on the surface of the insulating layer to form a barrier layer, and depositing a third conductive material on the barrier layer to fill the second connecting hole and then patterning it to form an upper conductive layer.