The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 1999
Filed:
Jan. 27, 1998
Komatsu Electronic Metals Co., Ltd., Kanagawa, JP;
Abstract
A MOS capacitor in which an insulating layer of thermal oxide film is disposed between the electrode 2 and the silicon wafer 1 is formed. While a light beam of an energy larger than 1.1 eV is irradiated on the electrode 2 and its periphery, electrons inject from the electrode 2 side (voltage is applied from the silicon wafer 1 side). The injected electrons are activated by the light irradiation. For both p-type or n-type semiconductor, the dielectric breakdown electric field strength can be precisely measured according to the degree of processing defects. The evaluation method is particularly effective for the n-type semiconductor wafer, which was difficult to evaluate by the prior art.