The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Aug. 27, 1997
Applicant:
Inventors:
Kenji Yasumura, Hyogo, JP;
Takaaki Murakami, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257345 ; 257285 ; 438289 ; 438290 ;
Abstract
Reverse short-channel effect is suppressed in a field effect transistor with a gate having a short length. The field effect transistor comprises a p-type silicon substrate, a gate electrode, paired lightly doped source/drain regions, and paired heavily doped source/drain regions. A boron concentration peak region is formed in the silicon substrate. A boron concentration peak region positioned at an end of the gate electrode has a length d of one fourth of a length L of the gate electrode, and extends from the end to the center of the gate electrode.