The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Jul. 11, 1997
Eung-Gie Oh, Daejeon, KR;
Jeon-Wook Yang, Daejeon, KR;
Chul-Soon Park, Daejeon, KR;
Kwang-Eui Pyun, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
This invention provides infrared sensing photodetector and a method therefor which provides a structure for effectively absorbing a light incident in a normal direction on a substrate, and a method compatible with existing processes for making integrated circuitry. An infrared sensing photodetector includes a compound semiconductor substrate of a first conductivity type, superlattice areas having implanted impurity ions of a second conductivity type opposite to the compound semiconductor substrate, each being spaced a predetermined distance each other in a selected region of the semiconductor substrate, a first collector area and a first emitter area which are formed in both end portions positioned perpendicular relative to the doped superlattice areas, a first collector electrode and a first emitter electrode formed on the first collector area and the first emitter area, respectively, a second collector area and a second emitter area which are spaced a predetermined distance in a horizontal direction on the doped superlattice area, and a second collector electrode and a second emitter electrode formed on the second collector area and the second emitter area, respectively.