The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Nov. 13, 1996
Rong-Wu Chien, Chayi, TW;
Tzu-Shih Yen, Taipei, TW;
Vanguard International Semiconductor Corp., Hsinchu, TW;
Abstract
A method of forming cavities in a non-conducting layer on a semiconductor device is provided which can be carried out by first providing a pre-processed semi-conducting substrate which has a non-conducting layer and a patterned photoresist layer sequentially deposited and formed on top, and then conformally depositing a polymeric material layer on top of the non-conducting and the photoresist layer, and then etching the polymeric material layer to form polymeric sidewall spacers on the patterned photoresist layer, and then etching cavities in the non-conducting layer to expose the semi-conducting substrate. The polymeric sidewall spacers formed on the sidewalls of the photoresist openings allow the fabrication of cavities such as contact holes or line spacings of reduced dimensions while utilizing a conventional low cost photolithographic method for patterning.