The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Jul. 24, 1997
Hee-sun Yoon, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Phase shift masks include axially spaced apart first and second radiation blocking layer patterns and a phase shifting layer pattern between the first and second radiation blocking layer patterns, on a phase shift mask substrate. The first and second axially spaced part radiation blocking layers can define narrow areas of the phase shifting layers so that patterns having fine linewidths and improved resolution can be formed on integrated circuits. Phase shifting masks can be fabricated by forming a first radiation blocking layer pattern on a phase shift mask, blanket forming a phase shifting layer and a second radiation blocking layer, patterning the second radiation blocking layer and patterning the phase shifting layer.