The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Apr. 17, 1997
Applicant:
Inventor:
Atsushi Yoshinaga, Chichibu, JP;
Assignee:
Showa Denko K.K., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05B / ;
U.S. Cl.
CPC ...
428212 ; 428690 ; 428700 ; 428917 ; 257101 ; 257103 ; 117955 ; 313498 ; 313503 ; 313506 ;
Abstract
An epitaxial structure for a GaP light-emitting diode comprises an n-type GaP single crystal substrate on which is formed a plural buffer layer epitaxially grown on the single crystal substrate, in which the buffer layer has a lower etch pit density than the etch pit density of the single crystal substrate, etch pit density decreases with each upper layer, and a GaP active layer is formed on the buffer layer.