The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Jun. 27, 1997
Applicant:
Inventors:
Stuart M Burns, Ridgefield, CT (US);
Hussein I Hanafi, Goldens Bridge, NY (US);
Waldemar W Kocon, Wappingers Falls, NY (US);
Jeffrey J Welser, Greenwich, CT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438719 ; 438733 ; 438735 ;
Abstract
Decoupled plasma etching process used to make a protruding structure having vertical or near vertical sidewalls. The decoupled plasma etching process comprises the following steps:
Burns, Stuart. (1999). Silicon sidewall etching (U.S. Patent No. 5895273). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5895273
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile