The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Nov. 06, 1997
Applicant:
Inventor:
Yong-jin Yoon, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
327 55 ; 327 57 ; 327432 ;
Abstract
Sense amplifiers for integrated circuit memory devices including a bipolar transistor voltage gain input buffer and a first effect transistor latch circuit. The bipolar transistor voltage gain input buffer is responsive to a pair of complementary input signals from a memory cell, to amplify the voltage differential between the pair of complementary input signals. The field effect transistor latch circuit is responsive to the bipolar transistor voltage gain input buffer, to latch the voltage differential so amplified, and thereby produce a pair of complementary output signals.