The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
May. 12, 1997
Applicant:
Inventors:
Hiroshi Mori, Kanagawa, JP;
Toshiyuki Sameshima, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257406 ; 257411 ; 257635 ; 438787 ; 438788 ;
Abstract
A semiconductor device advantageously has first and second oxidized silicon insulating layers formed on the surface of a substrate. A first oxidized silicon insulating layer is formed through a low temperature process and a second oxidized silicon insulating layer may be formed at a higher manufacturing process temperature. Advantageously, the first oxidized silicon insulating layer has a lower voltage resistance than the second oxidized silicon insulating layer.