The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Feb. 19, 1997
Claudio Brambilla, Concorezzo, IT;
Giancarlo Ginami, Bergamo, IT;
Stefano Daffra, Milan, IT;
Andrea Ravaglia, Olgiate Molgora, IT;
Manlio Sergio Cereda, Lomagna, IT;
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Abstract
A method for improving the intermediate dielectric profile, particularly for non-volatile memories constituted by a plurality of cells, including the following steps: forming field oxide regions and drain active area regions on a substrate; forming word lines on the field oxide regions; depositing oxide to form oxide wings that are adjacent to the word lines; opening, by masking, source regions and the drain active area regions, keeping the field oxide regions that separate one memory cell from the other, inside the memory, covered with resist; and removing field oxide in the source regions and removing oxide wings from both sides of the word lines.