The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Jan. 28, 1997
Applicant:
Inventor:
Larry Yu Wang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438401 ; 438427 ; 438734 ; 438975 ;
Abstract
A method of forming an alignment mark in a wafer during the manufacture of shallow isolation trenches for semiconductor devices provides a nitride layer on a substrate prior to the formation of the alignment mark. Once the nitride layer has been formed, etching is performed to create the alignment mark in the substrate. Further processing steps of the shallow trench isolation technique do not require the depositing of nitride into the alignment mark. Since the alignment mark is etched only after the nitride layer has been deposited, no further nitride enters into the alignment mark and a nitride-free alignment mark is provided.